Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2005-09-13
2008-08-19
Hiteshew, Felisa (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S200000, C438S166000, C438S487000
Reexamination Certificate
active
07413608
ABSTRACT:
A crystallization apparatus includes an illumination system which applies illumination light for crystallization to a non-single-crystal semiconductor film, and a phase shifter which includes first and second regions disposed to form a straight boundary and transmitting the illumination light from the illumination system by a first phase retardation therebetween, and phase-modulates the illumination light to provide a light intensity distribution having an inverse peak pattern that light intensity falls in a zone of the non-single-crystal semiconductor film containing an axis corresponding to the boundary. The phase shifter further includes a small region which extends into at least one of the first and second regions from the boundary and transmits the illumination light by a second phase retardation with respect to the at least one of the first and second regions.
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Jyumonji Masayuki
Kimura Yoshinobu
Matsumura Masakiyo
Nishitani Mikihiko
Taniguchi Yukio
Advanced LCD Technologies Development Center Co. Ltd.
Hiteshew Felisa
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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