Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – With means for measuring – testing – or sensing
Reexamination Certificate
2005-04-05
2008-03-25
Kunemund, Robert (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
With means for measuring, testing, or sensing
C117S004000
Reexamination Certificate
active
07347897
ABSTRACT:
A crystallization apparatus of the present invention irradiates a non-single-crystal semiconductor film with a luminous flux having a predetermined light intensity distribution to crystallize the film, and comprises a phase modulation device comprising a plurality of unit areas which are arranged in a certain period and which mutually have substantially the same pattern, and an optical image forming system disposed between the phase modulation device and the non-single-crystal semiconductor film. The unit area of the phase modulation device has a reference face having a certain phase, a first area disposed in the vicinity of a center of each unit area and having a first phase difference with respect to the reference face, and a second area disposed in the vicinity of the first area and having substantially the same phase difference as that of the first phase difference with respect to the reference face.
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patent: 2000-306859 (2000-11-01), None
Masakiyo Matsumura, “Preparation of Ultra-Large Grain Silicon Thin-Films by Excimer-Laser”, Surface Science, vol. 21. No. 5, 2000, pp. 278-287.
Kohki Inoue, et al., “Amplitude and Phase Modulated Excimer-Laser Melt-Regrowth Method of Silicon Thin-Films—A New Growth Method of 2-D Position-Controlled Large-Grains”, Journal of Papers of the Institute of Electronics, Information and Communications Engineers, IEICE The Transactions, vol. J85-C, No. 8, Aug. 2002, pp. 624-629.
Kato Tomoya
Matsumura Masakiyo
Taniguchi Yukio
Advanced LCD Technologies Development Center Co. Ltd.
Chaet Marissa W.
Kunemund Robert
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