Crystallization apparatus, crystallization method, and phase...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – With means for measuring – testing – or sensing

Reexamination Certificate

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C117S004000

Reexamination Certificate

active

07347897

ABSTRACT:
A crystallization apparatus of the present invention irradiates a non-single-crystal semiconductor film with a luminous flux having a predetermined light intensity distribution to crystallize the film, and comprises a phase modulation device comprising a plurality of unit areas which are arranged in a certain period and which mutually have substantially the same pattern, and an optical image forming system disposed between the phase modulation device and the non-single-crystal semiconductor film. The unit area of the phase modulation device has a reference face having a certain phase, a first area disposed in the vicinity of a center of each unit area and having a first phase difference with respect to the reference face, and a second area disposed in the vicinity of the first area and having substantially the same phase difference as that of the first phase difference with respect to the reference face.

REFERENCES:
patent: 6071765 (2000-06-01), Noguchi et al.
patent: 7018749 (2006-03-01), Taniguchi
patent: 7217319 (2007-05-01), Matsumura et al.
patent: 2000-306859 (2000-11-01), None
Masakiyo Matsumura, “Preparation of Ultra-Large Grain Silicon Thin-Films by Excimer-Laser”, Surface Science, vol. 21. No. 5, 2000, pp. 278-287.
Kohki Inoue, et al., “Amplitude and Phase Modulated Excimer-Laser Melt-Regrowth Method of Silicon Thin-Films—A New Growth Method of 2-D Position-Controlled Large-Grains”, Journal of Papers of the Institute of Electronics, Information and Communications Engineers, IEICE The Transactions, vol. J85-C, No. 8, Aug. 2002, pp. 624-629.

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