Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus
Reexamination Certificate
2006-02-21
2006-02-21
Ghyka, Alexander (Department: 2812)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
C117S007000, C438S166000, C438S487000, C430S005000
Reexamination Certificate
active
07001461
ABSTRACT:
A crystallization apparatus includes an illumination system which applies illumination light for crystallization to a non-single-crystal semiconductor film, and a phase shifter which includes first and second regions disposed to form a straight boundary and transmitting the illumination light from the illumination system by a first phase retardation therebetween, and phase-modulates the illumination light to provide a light intensity distribution having an inverse peak pattern that light intensity falls in a zone of the non-single-crystal semiconductor film containing an axis corresponding to the boundary. The phase shifter further includes a small region which extends into at least one of the first and second regions from the boundary and transmits the illumination light by a second phase retardation with respect to the at least one of the first and second regions.
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Jyumonji Masayuki
Kimura Yoshinobu
Matsumura Masakiyo
Nishitani Mikihiko
Taniguchi Yukio
Advanced LCD Technologies Development Center Co. Ltd.
Ghyka Alexander
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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