Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – With means for measuring – testing – or sensing
Reexamination Certificate
2004-10-06
2009-08-11
Hiteshew, Felisa C (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
With means for measuring, testing, or sensing
C117S200000, C117S202000, C117S900000, C117S904000, C117S905000, C250S206100, C430S005000
Reexamination Certificate
active
07572335
ABSTRACT:
A crystallization apparatus includes an illumination system which illuminates a phase-shift mask and an image-forming optical system arranged in an optical path between the phase-shift mask and a semiconductor film. The semiconductor film is irradiated with a light beam having a light intensity distribution of inverted peak patterns whose light intensity is the lowest in portions corresponding to phase shift sections to form a crystallized semiconductor film. The image-forming optical system is located to optically conjugate the phase-shift mask and the semiconductor film and has an aberration corresponding to the given wavelength range to form a light intensity distribution of inverted peak patterns with no swell of intensity in the middle portion.
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Jyumonji Masayuki
Kimura Yoshinobu
Matsumura Masakiyo
Nishitani Mikihiko
Taniguchi Yukio
Advanced LCD Technologies Development Center Co. Ltd.
Hiteshew Felisa C
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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