Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state
Reexamination Certificate
2007-05-15
2007-05-15
Kunemund, Robert (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from solid or gel state
C117S005000, C117S008000, C117S009000, C117S201000, C117S202000
Reexamination Certificate
active
10724261
ABSTRACT:
A crystallization apparatus includes an illumination system which illuminates a phase shifter having a phase shift portion, and irradiates a polycrystal semiconductor film or an amorphous semiconductor film with a light beam having a predetermined light intensity distribution in which a light intensity is minimum in a point area corresponding to the phase shift portion of the phase shifter, thereby forming a crystallized semiconductor film, the phase shifter has four or more even-numbered phase shift lines which intersect at a point constituting the phase shift portion. An area on one side and an area on the other side of each phase shift line have a phase difference of approximately 180 degrees.
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Matsumura Masakiyo
Taniguchi Yukio
Advanced LCD Technologies Development Center Co. Ltd.
Kunemund Robert
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