Crystallization apparatus and crystallization method

Details Crystallization apparatus and crystallization method Crystallization apparatus and crystallization method

2006-06-20

2006-06-20

Rosasco, S. (Department: 1756)

Joints and connections

Inflatable connector

Reexamination Certificate

active

07063478

ABSTRACT:
A crystallization apparatus includes a mask and an illumination system which illuminates the mask with a light beam, the light beam from the illumination system becoming a light beam having a light intensity distribution with an inverse peak pattern when transmitted through the mask, and irradiating a polycrystal semiconductor film or an amorphous semiconductor film, thereby generating a crystallized semiconductor film. The mask includes a light absorption layer having light absorption characteristics according to the light intensity distribution with the inverse peak pattern.

REFERENCES:
patent: 2002/0168577 (2002-11-01), Yoon
patent: 2004/0076894 (2004-04-01), Hwang
patent: 2004/0126674 (2004-07-01), Taniguchi et al.
Masakiyo Matsumura, “Preparation of Ultra-Large Grain Silicon Thin-Films by Excimer-Laser”, Surface Science, vol. 21, No. 5, 2000, pp. 278-287.
Mitsuru Nakata, et al., “A New Nucleation-Site-Control Excimer-Laser-Crystallization Method”, The Japan Society of Applied Physics, vol. 40, Part 1, No. 5A, May 2001, pp. 3049-3054.

Affiliated with

Also associated with

Rating

Crystallization apparatus and crystallization method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Crystallization apparatus and crystallization method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Crystallization apparatus and crystallization method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3632396