Crystalline thin film and producing method thereof, and acoustoo

Details Crystalline thin film and producing method thereof, and acoustoo Crystalline thin film and producing method thereof, and acoustoo

1996-08-13

1998-04-21

Mosley, Terressa

Stock material or miscellaneous articles

Web or sheet containing structurally defined element or...

428119, B32B 700, B32B 702

Patent

active

057415803

ABSTRACT:
A thin film having a good orientation and crystallinity. A method of producing the thin film on a substrate, wherein materials of a thin film are deposited and/or crystallized on a substrate. When a laser ablation method is adopted, the temperature of the glass substrate is set in the range between 200.degree. C. and 700.degree. C., and the pressure of O.sub.2 gas in a film forming chamber is set in the range between 7.times.10.sup.-5 Torr and 1.times.10.sup.-2 Torr. A laser beam irradiates a ZnO target. The target radiates materials of a thin film, such as neutral ions, molecules and ions, and the radiated materials are deposited and/or crystallized on the glass substrate to turn into a ZnO thin film.

REFERENCES:
Hirotoshi SATO et al., "Highly transparent and conductive group IV impurity-doped ZnO thin films prepared by radio frequency magnetron sputtering," J. Vac. Sci. Technol. A. 11,(6), Nov./Dec. 1993, pp. 2975-2979.
C.R. AITA et al., "The Effect of O.sub.2 on reactively sputtered zinc oxide," J. Appl. Phys. 51(10), Oct. 1980, pp. 5533-5536.
Takashi Yamamoto et al., "Characterization of ZnO piezoelectric films prepared by rf planar-magnetron sputtering," J. Appl. Phys. 51(6), Jun. 1980, pp. 3113-3120.

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