Chemistry of inorganic compounds – Silicon or compound thereof
Patent
1997-08-20
2000-07-18
Dunn, Tom
Chemistry of inorganic compounds
Silicon or compound thereof
423344, 427249, 427255, 4272552, 117 92, 117101, 117103, 117108, C01B 3300
Patent
active
060903589
ABSTRACT:
A novel material Si.sub.X C.sub.y N.sub.z, having a crystal structure similar to that of a.Si.sub.3 N.sub.4 with carbon atoms substituting most of the Si sites, is synthesized in crystalline form onto crystalline Si substrates by microwave plasma enhanced decomposition of carbon, silicon and nitrogen containing gasses.
REFERENCES:
patent: 4737379 (1988-04-01), Hudgens et al.
patent: 5110679 (1992-05-01), Haller et al.
patent: 5236545 (1993-08-01), Pryor
patent: 5254374 (1993-10-01), Devlin et al.
patent: 5320878 (1994-06-01), Maya
patent: 5508368 (1996-04-01), Knapp et al.
Bhusari Dhananjay Manohar
Chen Chun-Ku
Chen Kuei-Hsien
Chen Li-Chyong
Dunn Tom
National Science Council of Republic of China
Nguyen Cam N.
LandOfFree
Crystalline Si.sub.x C.sub.y N.sub.z and method for synthesis does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Crystalline Si.sub.x C.sub.y N.sub.z and method for synthesis, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Crystalline Si.sub.x C.sub.y N.sub.z and method for synthesis will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2033525