Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2007-01-25
2009-11-17
Toledo, Fernando L (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S066000, C257SE21411, C438S149000
Reexamination Certificate
active
07619253
ABSTRACT:
There is provided a technique to form a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film. An amorphous semiconductor thin film is irradiated with ultraviolet light or infrared light, to obtain a crystalline semiconductor thin film (102). Then, the crystalline semiconductor thin film (102) is subjected to a heat treatment at a temperature of 900 to 1200° C. in a reducing atmosphere. The surface of the crystalline semiconductor thin film is extremely flattened through this step, defects in crystal grains and crystal grain boundaries disappear, and the single crystal semiconductor thin film or substantially single crystal semiconductor thin film is obtained.
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Specifications and Drawings for Application Serial No. 09/894,125, “Crystalline Semiconductor Thin Film, Method of Fabricating the Same, Semiconductor Device and Method of Fabricating the Same,” Filing Date: Jun. 29, 2001, Inventors: Shunpei Yamazaki, et al.
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Ohtani Hisashi
Takano Tamae
Yamazaki Shunpei
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
Toledo Fernando L
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