Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having moving solid-liquid-solid region
Reexamination Certificate
2006-12-26
2006-12-26
Kunemund, Robert (Department: 1765)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having moving solid-liquid-solid region
C117S044000, C117S045000, C117S046000, C117S047000, C117S904000, C117S905000
Reexamination Certificate
active
07153359
ABSTRACT:
A crystalline semiconductor film, the crystalline semiconductor film being formed over an insulative substrate, and including semiconductor crystal grains laterally grown along a surface of the insulative substrate, wherein the laterally-grown semiconductor crystal grains are in contact with each other at grain boundaries, and a distance between adjacent grain boundaries is equal to or smaller than two times a lateral growth distance of the semiconductor crystal grains.
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