Crystalline composition, wafer, device, and associated method

Details Crystalline composition, wafer, device, and associated method Crystalline composition, wafer, device, and associated method

2007-01-09

2010-12-28

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

C257S080000, C257S101000

Reexamination Certificate

active

07859008

ABSTRACT:
A crystalline composition is provided that includes gallium and nitrogen. The crystalline composition may have an amount of oxygen present in a concentration of less than about 3×1018per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the crystalline composition. The volume may have at least one dimension that is about 2.75 millimeters or greater, and the volume may have a one-dimensional linear defect dislocation density of less than about 10,000 per square centimeter.

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