Crystalline composition, wafer, and semi-conductor structure

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material

Reexamination Certificate

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C257S080000, C257S101000, C257S200000, C257SE31058

Reexamination Certificate

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07638815

ABSTRACT:
A crystalline composition is provided. The crystalline composition may include gallium and nitrogen; and the crystalline composition may have an infrared absorption peak at about 3175 cm−1, with an absorbance per unit thickness of greater than about 0.01 cm−1.

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