Crystal wafer rack structures and the method of producing the sa

Details Crystal wafer rack structures and the method of producing the sa Crystal wafer rack structures and the method of producing the sa

1974-09-27

1980-05-20

Parrish, John A.

Plastic and nonmetallic article shaping or treating: processes

With severing, removing material from preform mechanically,...

Making hole or aperture in article

264162, B28B 148

Patent

active

042039401

ABSTRACT:
Crystal wafer rack structures composed of Si or SiC are produced by forming a tube-shaped body, for example, of Si, by pyrolytic deposition of silicon on a heated graphite mandrel from a suitable gaseous atmosphere with the removal of the mandrel without destroying the body and then machining the tube so that two separate wall portions are formed therefrom which extend parallel to the tube axis and are joined to one another by at least one bridging portion in the form of a closed arc between such wall portions and a plurality of uniformly spaced support grooves are provided in each of the wall portions for supporting the wafers during processing.

REFERENCES:
patent: 3226254 (1965-12-01), Reuschel
patent: 3480151 (1969-11-01), Schmitt
patent: 3534862 (1970-10-01), Shambelan
patent: 3850296 (1974-11-01), Hirata et al.
Kobayashi, "Characteristics of the Diamond Cutting-Off Wheel for Germanium and Ceramics," Proc. First, Int'l, Cong. Diamonds, pp. 229-239 (1962).

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