Crystal pulling methods and apparatus

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth

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Details

117 35, 117208, 117218, C30B 1532

Patent

active

058794484

ABSTRACT:
A method and an apparatus for pulling a single crystal are disclosed. A first neck portion, a convex portion, and a second neck portion are formed in this order under a seed crystal held by a seed chuck, and subsequent to the second neck portion, a single crystal having a diameter-expanding portion and a straight cylindrical portion is formed. Lifting holders are brought around and in proximity to the second neck portion when the second neck portion rises to a predetermined position during the pulling by the seed chuck. The single crystal and the lifting holders are moved relative to each other in the vertical direction to thereby bring the convex portion into contact with the lifting holders in a resting manner, so that part of a load borne by the seed chuck is shifted to the lifting holders. Subsequently, the pulling operation is performed by the lifting holders. Accordingly, a single crystal having a larger weight can be pulled safely while maintaining high quality.

REFERENCES:
patent: 5126113 (1992-06-01), Yamagishi
patent: 5441014 (1995-08-01), Tomioka
patent: 5487355 (1996-01-01), Chiou

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