Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1997-10-06
1999-03-16
Hiteshew, Felisa C.
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
17 14, 17 15, 17208, 17218, C30B 1532
Patent
active
058823972
ABSTRACT:
In a crystal pulling method in which a growing single crystal is initially pulled by a seed chuck and subsequently pulled by lifting jig in the middle of the pulling operation, the speed Va of the seed chuck relative to the lifting jig is decreased, while the rising speed Vb of the lifting jig increases, from a first point where switching of the pulling mechanism from the seed chuck to the lifting jig is started. The total speed Vt=Vb+Va is constantly maintained at a desired pulling speed V up to a third point where the shifting of the load from the seed chuck to the lifting jig is started. Subsequently, the total speed Vt is made less than the desired pulling speed V from the third point where the shifting of the load from the seed shuck to the lifting jig is started. This enables accurate growth of a crystal.
REFERENCES:
patent: 4367199 (1983-01-01), Jericho
patent: 4371502 (1983-02-01), Sibley et al.
patent: 4916955 (1990-04-01), Katsuoka et al.
Iida Makoto
Iino Eiichi
Kimura Masanori
Muraoka Shozo
Urano Masahiko
Hiteshew Felisa C.
Shin Etsu Handotai Co., Ltd.
LandOfFree
Crystal pulling method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Crystal pulling method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Crystal pulling method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-813366