Crystal pulling apparatus and crystal pulling method using the s

Chemical apparatus and process disinfecting – deodorizing – preser – Chemical reactor – Including specific material of construction

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1566171, 1566204, 156DIG64, C30B 3500, C30B 1512

Patent

active

050212257

ABSTRACT:
In a crystal pulling process using an integral type double crucible, a cylindrical separation wall is mounted in and is coaxial with a crucible, for receiving semiconductor material melt to divide the crucible into inner and outer chambers. A coupling tube fixed at the side wall of the separation wall and having a pipe-like passage with a small hole is provided to make a pass between the inner and outer chambers. While material melt in the outer chamber is being supplied to the inner chamber via the coupling tube, crystal is pulled from the melt received in the inner chamber and having an impurity composition different from that of the melt in the outer chamber.

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H. F. Matare, "General Considerations Concerning The Double-Crucible Method to Grow Uniformly Doped Germanium Crystals of High Perfection", Solid State Electronics, vol. 6, pp. 163-167 (1963).
Brice, J. C., "Crystal Growth Processes", Halsted Press, John Wiley and Sons, New York, 1986.

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