Crystal pulling apparatus

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state

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117208, 117222, C30B 3500

Patent

active

057074470

ABSTRACT:
A crystal pulling apparatus for producing a crystal boule (17) from a material melted in a crucible (4) has, in a tank (1), a heater (5) surrounding the crucible (4). The tank (1) has in the area of the crucible (4) an annular chamber (8) defined on the heater (5) side by an inner protective wall (6) and connected to the shielding gas outlet (14, 15), and on the outside by an outer protective wall (7) behind which the thermal insulation (10) of the tank (1) is located.

REFERENCES:
patent: 3556732 (1971-01-01), Chang et al.
patent: 4956153 (1990-09-01), Yamgishi et al.
patent: 5360480 (1994-11-01), Altekruger
JP 06-2 93 589 A In: Patent Abstracts of Japan.
IBM Technical Disclosure Bulletin, vol. 28, No. 1, Jun. 1985, NY, pp. 211-212, XP002023174 "Aparatus for low to medium level level oxygen czochrslski silicon crystal growth".
Patent Abstracts of Japan, vol. No. 8, No. 266 (C-255 (1703) & JP-A-59 141494 (Hitach Seisakusho KK), abstract.

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