Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Patent
1996-09-26
1998-01-13
Garett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
For crystallization from liquid or supercritical state
117208, 117222, C30B 3500
Patent
active
057074470
ABSTRACT:
A crystal pulling apparatus for producing a crystal boule (17) from a material melted in a crucible (4) has, in a tank (1), a heater (5) surrounding the crucible (4). The tank (1) has in the area of the crucible (4) an annular chamber (8) defined on the heater (5) side by an inner protective wall (6) and connected to the shielding gas outlet (14, 15), and on the outside by an outer protective wall (7) behind which the thermal insulation (10) of the tank (1) is located.
REFERENCES:
patent: 3556732 (1971-01-01), Chang et al.
patent: 4956153 (1990-09-01), Yamgishi et al.
patent: 5360480 (1994-11-01), Altekruger
JP 06-2 93 589 A In: Patent Abstracts of Japan.
IBM Technical Disclosure Bulletin, vol. 28, No. 1, Jun. 1985, NY, pp. 211-212, XP002023174 "Aparatus for low to medium level level oxygen czochrslski silicon crystal growth".
Patent Abstracts of Japan, vol. No. 8, No. 266 (C-255 (1703) & JP-A-59 141494 (Hitach Seisakusho KK), abstract.
Scholler Johann
Schulmann Winfried
Balzers Und Leybold Deutschland Holding AG
Garett Felisa
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