Crystal production method for gallium oxide-iron mixed crystal

Details Crystal production method for gallium oxide-iron mixed crystal Crystal production method for gallium oxide-iron mixed crystal

2005-11-22

2005-11-22

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having moving solid-liquid-solid region

C117S050000, C117S051000

Reexamination Certificate

active

06966946

ABSTRACT:
A manufacturing method of a Ga2-xFexO3crystal is provided which can form a superior, uniform, and large crystal.By a floating zone melting method in which ends of material bars (3, 5), which are disposed at an upper and a lower position and which are composed of Ga2-xFexO3, are heated in a gas atmosphere with halogen lamps (6, 7) disposed at confocal areas so as to form a floating melting zone between the ends of the material bars (3, 5) which are disposed at the upper and the lower position and which are composed of Ga2-xFexO3, Ga2-xFexO3a single crystal having an orthorhombic crystal structure is formed.

REFERENCES:
patent: 6165263 (2000-12-01), Sekijima et al.
Yu. F. Popov et al., Linear Magnetostriction and Magnetoelectric Effect in Piezoelectric Ga2-xFexO3Ferroelectrics. 1997, vol. 204, No. 1-4, pp. 269 to 277.

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