Crystal producing method and apparatus therefor

Details Crystal producing method and apparatus therefor Crystal producing method and apparatus therefor

1996-03-04

1999-12-14

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 93, 117201, 118725, C30B 2514

Patent

active

060011750

ABSTRACT:
A method and apparatus of producing a crystal by using of vapor growth process, wherein: a high-frequency coil or conductor having a coil or conductor surface to generate a plane-like induction electric field is arranged so that at least one gas blowout port is connected to the coil or conductor surface so as to face a solid substrate; and a component element or a chemical compound is continuously precipitated and grown on a surface of the solid substrate at a temperature of not higher than the melting point of the solid substrate while the solid substrate is inductively heated by the high-frequency coil or conductor and a raw gas is supplied onto the surface of the solid substrate through the gas blowout port, to thereby produce a polycrystal or monocrystal thin film.

REFERENCES:
patent: 3008447 (1961-11-01), Lacroix
patent: 3381114 (1968-04-01), Nakanuma
patent: 3627590 (1971-12-01), Mammel
patent: 5155062 (1992-10-01), Coleman
patent: 5186756 (1993-02-01), Benko et al.
patent: 5320680 (1994-06-01), Learn et al.
patent: 5715361 (1998-02-01), Moslehi

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