Crystal oscillator with broad tuning capability

Oscillators – Solid state active element oscillator – Transistors

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Details

331107A, 331176, 331177V, H03B 536

Patent

active

049241958

ABSTRACT:
A first transistor is connected in grounded-collector-emitter-follower configuration to generate a high enough negative resistance to overcome the oscillating resistance of the crystal resonator connected to the base electrode. A second transistor connected in grounded-base configuration serves as a buffer and impedance transformer between the low impedance output of the first transistor and the high impedance of a load. An inductor connected between the resonator and the first transistor input and a variable capacitance approximating the shunt capacitance of the resonator connected across the first transitor input form an impedance inverter which absorbs the resonator shunt capacitance and converts the effect of the resonator to a parallel tuned circuit that can be broadly tuned.

REFERENCES:
patent: 3995233 (1976-11-01), Waku
M. E. Frerking "Crystal Oscillator Design and Temperature Compensation", 1978 Van Nostrand Reinhold, pp 56-58, 72-73, 89-90, 122-124.
B. Parzen "Design of Crystal and Other Harmonic Oscillators", 1983 John Wyley and Sons, pp. 92-95, 100-102, 125-127.
T. O'Shea at al. "Precision L-Band SAW Oscillator for Satellite Application", SAWTEK Incorporated.

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