Oscillators – Solid state active element oscillator – Transistors
Patent
1980-01-10
1981-10-27
Grimm, Siegfried H.
Oscillators
Solid state active element oscillator
Transistors
331116R, H03B 536
Patent
active
042976545
ABSTRACT:
A semiconductor element having a MOS-capacitor between a zone provided in an epitaxial layer on a substrate and a conductive layer on an insulating layer above the zone is utilized in a structure comprising a tunable oscillator having a differential amplifier, a current distributor controlled by a control voltage, a phase shifting element comprising the MOS-capacitor and a feedback path present between the phase shifting element and an input of the differential amplifier. The feedback path comprises a quartz oscillator and an emitter-follower transistor. The stray capacitance between the zone and a substrate of the opposite conductivity type is considerably reduced by a further zone of the opposite conductivity type which is applied to a fixed potential through a connection electrode. This connection point is for the supply voltage of the circuit, while the further zone of the first conductivity type is connected parallel to the emitter-base current path of the emitter-follower transistor.
REFERENCES:
patent: 3893146 (1975-07-01), Heeren
patent: 3953875 (1976-04-01), Cave et al.
patent: 3973221 (1976-08-01), Jett, Jr.
patent: 4081766 (1978-03-01), Gay
Briody Thomas A.
Grimm Siegfried H.
Mayer Robert T.
Miller Paul R.
U.S. Philips Corporation
LandOfFree
Crystal oscillator including a MOS-capacitor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Crystal oscillator including a MOS-capacitor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Crystal oscillator including a MOS-capacitor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-281868