Crystal orientation detectable semiconductor substrate, and meth

Details Crystal orientation detectable semiconductor substrate, and meth Crystal orientation detectable semiconductor substrate, and meth

1995-11-07

1999-03-02

Speer, Timothy M.

Stock material or miscellaneous articles

Circular sheet or circular blank

428 665, 428 667, 257797, 438975, B32B 302

Patent

active

058768190

ABSTRACT:
A semiconductor substrate with no reduction in the effective usage area and mechanical strength, and non-uniformity of the resist film thickness, and method of manufacturing and using the same are obtained. A detection mark for detecting the crystal orientation of a silicon wafer having an outer perimeter entirely of a circular contour is formed at a predetermined region of the silicon wafer. The crystal orientation of the semiconductor wafer can easily be detected with the outer perimeter still taking a circular contour. Therefore, various problems encountered in a conventional semiconductor substrate having an orientation flat or notch such as reduction in mechanical strength and effective usage area, and non-uniformity of the resist film can be circumvented.

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