Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Patent
1996-10-08
1998-12-08
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
For crystallization from liquid or supercritical state
117208, 117222, C30B 3500
Patent
active
058463232
ABSTRACT:
A crystal pulling apparatus is designed to generate a thermal gradient across the melt surface to prevent nucleation of stray crystals and production of floating debris to produce a high quality crystal, and has special provisions for observing the growth behavior and crystal dimension measurements. The apparatus includes a cylindrical chamber, a crucible disposed centrally within the chamber, a cylindrical heater surrounding the crucible, an insulation member disposed on the top section of the crucible, a first transparent plate and a second transparent plate for closing the center hole in the insulation member, a pull rod passing through the center hole of the transparent plates, a crystal illumination mechanism, a crystal size determination mechanism and an ambient atmosphere flowing mechanism. The crystal size determination mechanism is provided with a quartz prism, an infrared transmitting filter on a side wall of the chamber, a revolution count circuit, phase angle setting circuit, a CCD camera, an image processing section, and a crystal size determination device having a TV monitor.
REFERENCES:
patent: 3701636 (1972-10-01), Labelle, Jr. et al.
patent: 4314128 (1982-02-01), Chitre
patent: 4957713 (1990-09-01), Kraretsky et al.
Egami Masahiro
Namikawa Yasuo
Shiohara Yuh
Garrett Felisa
International Superconductivity Technology Center, the Juridical
Ishikawajima-Harima Heavy Industries Co. Ltd.
Sumitomo Electric Industries Ltd.
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