Crystal manufacture method

Details Crystal manufacture method Crystal manufacture method

2005-08-16

2005-08-16

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Havin growth from molten state

C117S068000, C117S078000, C117S081000, C117S940000

Reexamination Certificate

active

06929694

ABSTRACT:
A method for manufacturing fluoride crystal includes the steps of adding scavenger and a material to a crucible, melting the scavenger and material at a temperature higher than a melting point so that a ratio of a thickness of the fluoride crystal that has been melted to an inner diameter of the crucible may be 0.2 or higher, and gradually crystallizing and purifying the material.

REFERENCES:
patent: 6488769 (2002-12-01), Oba
patent: 2004/0123795 (2004-07-01), Toshio
patent: 9-315893 (1997-12-01), None
patent: 10-330192 (1998-12-01), None

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