Crystal making method

Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

505729, 156600, 156621, 156624, C30B 1104

Patent

active

052179443

ABSTRACT:
A method for preparing a textured polycrystalline material having, in the crystalline state, a magnetic anisotropy, comprises the following steps:

REFERENCES:
patent: 4939121 (1990-07-01), Rybka
patent: 4956339 (1990-09-01), Yamazaki
patent: 4990493 (1991-02-01), Lay
patent: 5039653 (1991-08-01), Jackson et al.
"Control of Crystallization Processes by Means of Magnetic Fields", Journal of Crystal Growth, vol. 52, 1981, pp. 524-529, by Mikelson et al.
N.T.I.S. Technical Notes, No. 4, 1986, NASA Technical Brief "Damping Melt Convention with a Magnetic Field" 1986.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Crystal making method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Crystal making method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Crystal making method will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1934017

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.