Electric heating – Metal heating – By arc
Reexamination Certificate
2005-03-22
2005-03-22
Elve, M. Alexandra (Department: 1725)
Electric heating
Metal heating
By arc
C219S121850
Reexamination Certificate
active
06870125
ABSTRACT:
Disclosed are a crystal layer separation method capable of separating a crystal layer formed on a substrate therefrom without occurrence of any crack, and a laser irradiation method used therefor, and a method of fabricating devices using the same. The crystal layer separation method includes the step of separating a crystal layer made from a GaN based compound formed on a sapphire substrate therefrom by irradiating the crystal layer with a laser beam from the back surface of the substrate, wherein the crystal layer is irradiated with the laser beam in a line-shape. In this method, an irradiation width of the laser beam is preferably equal to or less than a thickness of the crystal layer, and the laser beam preferably has a light intensity distribution smoothened in the width direction.
REFERENCES:
patent: 6420242 (2002-07-01), Cheung et al.
patent: 6448102 (2002-09-01), Kneissl et al.
patent: 6562648 (2003-05-01), Wong et al.
patent: 04-182093 (1992-06-01), None
patent: 2000-101139 (2000-04-01), None
Doi Masato
Iwafuchi Toshiaki
Oohata Toyoharu
Elve M. Alexandra
Sony Corporation
Wolf Greenfield & Sacks P.C.
LandOfFree
Crystal layer separation method, laser irradiation method... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Crystal layer separation method, laser irradiation method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Crystal layer separation method, laser irradiation method... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3420221