Crystal ion-slicing of single-crystal films

Details Crystal ion-slicing of single-crystal films Crystal ion-slicing of single-crystal films

1998-02-17

2000-09-19

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth with a subsequent step of heat treating...

117915, 117 4, 438406, 438407, 438458, 216 62, 216 87, C30B 3122

Patent

active

061205974

ABSTRACT:
A method is provided for detaching a single-crystal film from an epilayer/substrate or bulk crystal structure. The method includes the steps of implanting ions into the crystal structure to form a damage layer within the crystal structure at an implantation depth below a top surface of the crystal structure, and chemically etching the damage layer to effect detachment the single-crystal film from the crystal structure. The method of the present invention is especially useful for detaching single-crystal metal oxide films from metal oxide crystal structures.

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