Crystal growth methods

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step acting on the...

Reexamination Certificate

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Details

C117S081000, C117S082000, C117S083000, C117S942000, C117S940000

Reexamination Certificate

active

07033433

ABSTRACT:
The invention is directed to method of preparing metal fluoride single crystals and particularly to crystals where the metal is calcium, barium, magnesium or strontium, or a mixture thereof. The invention uses a decreasing fast cooling profile and an increasing slow cooling profile for the hot zone and the cold zone, respectively, after crystal formation during cooling from melt temperatures to a first temperature. A substantially constant cooling rate is then applied to the both zones during cooling from the first temperature to a final temperature, usually room temperature. It has been found that the substantially constant cooling rate during the annealing process results in crystals having improved homogeneity and birefringence.

REFERENCES:
patent: 6332922 (2001-12-01), Sakuma et al.
patent: 6350310 (2002-02-01), Gianoulakis
patent: 6377332 (2002-04-01), Sakuma et al.
patent: 6620347 (2003-09-01), Lo Iacono
patent: 6850371 (2005-02-01), Obara et al.
patent: 2001/0019453 (2001-09-01), Shiozawa
patent: 2002/0038625 (2002-04-01), Sakuma et al.
patent: 2002/0066402 (2002-06-01), Price
patent: 2002/0185057 (2002-12-01), Garibin et al.
patent: 2003/0089307 (2003-05-01), Wehrhan et al.
patent: 2004/0099205 (2004-05-01), Li et al.
patent: WO 01/73168 (2001-10-01), None

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