Crystal growth method of nitride semiconductor

Details Crystal growth method of nitride semiconductor Crystal growth method of nitride semiconductor

2006-04-04

2006-04-04

Tran, Mai-Huong (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

C257S079000, C257S094000, C257S096000, C427S255280

Reexamination Certificate

active

07023025

ABSTRACT:
The present invention relates to a method of manufacturing a nitride semiconductor, and, more particularly, a crystal growth method of a nitride semiconductor wherein a nitride semiconductor are grown on a nitride buffer layer including aluminums so that it is possible to improve electrical and crystalline characteristics.

REFERENCES:
patent: 2002/0125491 (2002-09-01), Shibata et al.
patent: 2002/0192373 (2002-12-01), Sone et al.

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