Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1997-01-13
1998-12-01
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 94, 117101, 117104, 117952, C30B 2518
Patent
active
058432272
ABSTRACT:
A crystal growth method for growing on a gallium arsenide (GaAs) substrate a gallium nitride (GaN) film which is good in surface flatness and superior in crystallinity. According to the method, a GaAs substrate having a surface which is inclined with respect to the GaAs(100) face is used. The inclination angle of the substrate surface is larger than 0 degree but smaller than 35 degrees with respect to the GaAs(100) face. The inclination direction of the substrate surface is within a range of an taken as an axis, or within another range crystallographically equivalent to the range. The GaN layer is formed on the surface of the GaAs substrate preferably by hydride vapor deposition method.
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Kimura Akitaka
Nido Masaaki
Sunakawa Haruo
Yamaguchi Atsushi
Kunemund Robert
NEC Corporation
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