Crystal growth method for compound semiconductor

Details Crystal growth method for compound semiconductor Crystal growth method for compound semiconductor

1996-09-23

1998-06-23

Dutton, Brian

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Groove formation

438 44, H01L 2100

Patent

active

057704759

ABSTRACT:
A crystal growth method for a compound semiconductor is capable of forming a plurality of quantum wells (formed of a barrier layer having a large energy band gap and an active layer having a small energy band gap) on the compound semiconductor substrate. After etching a V-shaped groove having a (111) surface with a predetermined angle .theta.1 with respect to the (100) surface on the GaAs semiconductor substrate, the substrate is further etched by a hydrochloric solution and a solution of H.sub.2 SO.sub.4 :H.sub.2 O.sub.2 :H.sub.2 O=20:1 to cause the V-shaped groove walls to become a non-(111) surface having a lower predetermined slope angle .theta.2. The quantum wells then grown in the bottom of the V-shaped groove will be effectively disconnected from simultaneous growths on the side walls of the groove thus giving rise to closely controlled multi-dimensional quantum well structures.

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