Crystal-growth method and semiconductor device production method

Details Crystal-growth method and semiconductor device production method Crystal-growth method and semiconductor device production method

1994-12-21

1996-02-20

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

Using an energy beam or field, a particle beam or field, or...

117956, 437105, C30B 2519

Patent

active

054920809

ABSTRACT:
A crystal-growth method includes a process of filling three materials separately, one being selected from a group consisting of elemental Mg, MgS and MgSe compounds, and the other two being ZnSe and ZnS compounds, in their respective effusion cells, and a crystal-growth process of a Zn.sub.1-Y Mg.sub.Y S.sub.Z Se.sub.1-Z (0<Y>1 and 0<Z>1) single-crystalline thin film on a heated substrate by controlling the temperatures of the effusion cells and the molecular beam intensities.

REFERENCES:
patent: 5028561 (1991-07-01), Kamath et al.
patent: 5057183 (1991-10-01), Tomomura et al.
Xie et al., Appl. Phys. Lett. 60(4), Jan. 1992, pp. 463-465, "Blue/Green pn Junction Electroluminescence From ZnSe-Based Multiple Quantum-Well Structures".
Ohkawa et al., Japanese Journal of Applied Physics, vol. 30, No. 2A, Feb. 1991, pp. L152-L155, "Characteristics of p-type ZnSe Layers Grown by Molecular . . . ".
Menda et al., Japanese Journal of Applied Physics, vol. 26, No. 8, Aug. 1987, pp. L1326-L1329, "RHEED Observation on (001) ZnSe Surface: MBE Surface Phase . . . ".
Park, J. Vac. Sci. Technol. A 10(4), Jul./Aug. 1992, "Low-Resistivity P-Type ZnSe:N Grown by Molecular Beam Epitaxy Using a Nitrogen Free-Radical Source".
Cheng et al., J. Vac. Sci. Technol. B8(2), Mar./Apr. 1990, "Molecular-Beam Epitaxy Growth of ZnSe Using a Cracked Selenium Source".
Yao, Researches of the Electrotechnical Laboratory, No. 854, Apr. 1985, "Molecular Beam Epitaxy of Zn-Chalcogenides".
Ohishi et al., Journal of Crystal Growth, vol. 117, pp. 125-128, 1992, "Low Temperature Growth of ZnSe/GaAs Using Hot Molecular Beams".
Ohkawa et al., J. Appl. Phys., 62(8), pp. 3216-3221, Oct. 1987, "Characteristics of CI-Doped ZnSe Layers Grown by Molecular-Beam Epitaxy".
Okuyama et al, Journal of Crystal Growth, vol. 117, pp. 139-143, 1992, "Epitaxial Growth of ZnMgSSe on GaAs Substrate by Molecular Beam Epitaxy".
Itoh et al., Jpn. J. Appl. Phys., vol. 32, No. 10B, 1993, pp. L1530-L1532, "491-nm ZnCeSe/ZnSe/ZnMgSSe SCH Laser Diode With a Low Operating Voltage".
Xie et al, Appl. Phys. Lett. 60(16), Apr. 1992, pp. 1999-2001, "Room Temperature Blue Light Emitting p-n Diodes from Zn(S, Se)-based Multiple . . . ".
Search Report for European Appl. 94120788.8, mailed May 2, 1995.
Meng et al., "Modified Hot Wall Epitaxy (HWE) Apparatus & Preparation of ZnSxSe.sub.1-x Films", 2300 Journal of Crystal Growth, #121 (1992) Jun., Nos. 1/2, pp. 191-196, Netherlands.
Wu et al, "Molecular Beam Epitaxial Growth of Col ZnS Using Elemental Sources", 320 Appl. Phys. Ltrs, 63 (1 993) 22 Nov., No. 21, N.Y., pp. 2935-2937.
Yoneda et al., "The Preparation of Conductive ZnS Films Bullsing MBE with A Single Effusin Lett Source", J. of Crystal Growth, vol. 67 (1984) pp. 125-134.

Affiliated with

Also associated with

Rating

Crystal-growth method and semiconductor device production method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Crystal-growth method and semiconductor device production method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Crystal-growth method and semiconductor device production method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1350563