Crystal growth method and apparatus therefor

Details Crystal growth method and apparatus therefor Crystal growth method and apparatus therefor

1995-01-11

1996-07-23

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 93, 117108, 117954, C30B 2504

Patent

active

055379516

ABSTRACT:
A crystal growth method is based on a molecular beam epitaxy method. The crystal growth method includes the steps of opening/closing a shutter member provided between a deposition source and a substrate in an ultra-high vacuum so as to form a region having a predetermined pattern on the substrate and forming a crystal growth layer only in the region having the pattern on the substrate during an epitaxial growth step.

REFERENCES:
patent: 3615931 (1971-10-01), Arthur
patent: 3865625 (1975-02-01), Cho et al.
patent: 4411728 (1983-10-01), Sakamoto
patent: 4622083 (1986-11-01), Shih
patent: 4640720 (1987-02-01), Foxon
patent: 5403819 (1995-04-01), Nakamura
Monolithic Integration Of GaAs And In.sub.0.2 Ga.sub.0.8 As Lasers By Molecular Beam Epitaxy On GaAs, Berger et al., Appl. Phys. Lett. 58(23), Jun. 10, 1991, pp. 2698-2700.
Pixels Consisting Of Double Vertical-Cavity Detector And Single Vertical-Cavity Laser Sections For 2-D Bidirectional Optical Interconnections, Kosaka et al., Jpn. J. Appl. Phys. vol. 32(1993) pp. 600-603 Part 1. No. 1B, Jan. 1993.

Affiliated with

Also associated with

Rating

Crystal growth method and apparatus therefor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Crystal growth method and apparatus therefor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Crystal growth method and apparatus therefor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-706412