Crystal growth method and apparatus

Details Crystal growth method and apparatus Crystal growth method and apparatus

2011-01-04

2011-01-04

Song, Matthew J (Department: 1714)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

C117S084000, C117S088000, C117S098000, C117S107000, C118S715000, C118S719000, C118S724000, C118S725000

Reexamination Certificate

active

07862657

ABSTRACT:
A crystal growth method for forming a semiconductor film, the method includes: while revolving one or more substrates about a rotation axis, passing raw material gas and carrier gas from the rotation axis side in a direction substantially parallel to a major surface of the substrate. The center of the substrate is located on a side nearer to the rotation axis than a position at which growth rate of the semiconductor film formed by thermal decomposition of the raw material gas is maximized.

REFERENCES:
patent: 6090211 (2000-07-01), Kamei et al.
patent: 6108491 (2000-08-01), Anderson
patent: 6656284 (2003-12-01), Hwang et al.
patent: 6837940 (2005-01-01), Komeno et al.
patent: 2004/0060518 (2004-04-01), Nakamura et al.
patent: 2005/0000406 (2005-01-01), Janzen et al.
patent: 2005/0181627 (2005-08-01), Kamata et al.
patent: 2003-257867 (2003-09-01), None

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