Crystal growth method and apparatus

Details Crystal growth method and apparatus Crystal growth method and apparatus

1998-08-12

2000-10-31

Utech, Benjamin L.

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

117 84, 117 88, 117 99, 117100, 117109, 117956, 148DIG64, C30B 2500, C30B 3500

Patent

active

061396311

ABSTRACT:
A crystal growth method having the steps of: preparing a growth container having a vapor generating chamber VC provided with a source material 14, a growth chamber GC provided with a seed crystal 12, and a coupling portion 18 having a cross sectional area narrower than a cross sectional area of each of the vapor generating chamber and the growth chamber, the coupling portion coupling the vapor generating chamber and the growth chamber; and vapor-phase growing a single crystal on the seed crystal by forming a temperature gradient in the growth container and by maintaining the seed crystal in the growth chamber at a growth temperature and the source material in the vapor generating chamber at a vapor supply temperature higher than the growth temperature. A crystal having a diameter larger than that of a seed crystal can be formed easily.

REFERENCES:
patent: 4155784 (1979-05-01), Mills et al.
patent: 4662981 (1987-05-01), Fujiyasu et al.
patent: 4869776 (1989-09-01), Kitagawa et al.
patent: 5707446 (1998-01-01), Volkl et al.
patent: 5858086 (1999-01-01), Hunter

Affiliated with

Also associated with

Rating

Crystal growth method and apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Crystal growth method and apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Crystal growth method and apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2046530