Crystal growth method and apparatus

Details Crystal growth method and apparatus Crystal growth method and apparatus

1991-12-30

1994-12-13

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth with a subsequent step acting on the...

C30B 1114

Patent

active

053720881

ABSTRACT:
In a VGF crystal growth method, the configuration of the outer periphery of the seed crystal (15) has the same dimensions as the configuration of the inner surface of the major portion of the crucible (12).

REFERENCES:
patent: 4404172 (1983-09-01), Gault
patent: 4946542 (1990-08-01), Clemans
patent: 4966645 (1990-10-01), Shahid
patent: 5064497 (1991-11-01), Clemans et al.
"A Novel Application of the Vertical Gradient Freeze Method to the Growth of High Quality III-V Crystals," W. A. Gault et al., Journal of Crystal Growth, vol. 74, pp. 491-506, 1986.
"Elements of X-Ray Diffraction," B. B. Cullity, Addison-Wesley Publishing Company, Inc. 1956, pp. 55-60.

Affiliated with

Also associated with

Rating

Crystal growth method and apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Crystal growth method and apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Crystal growth method and apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1187185