Crystal growth method

Details Crystal growth method Crystal growth method

1992-12-30

1995-10-10

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

117 94, 117103, 437173, 437973, H01L 21265

Patent

active

054570581

ABSTRACT:
A crystal growth method for applying a crystallization treatment onto an amorphous film which includes injecting ions of the constituent material of the film into the film applied with the crystallization treatment provided with a mask to form a first region and a second region made amorphous by the ion injection, and growing a crystal from the first region to the second region by solid phase growth.

REFERENCES:
patent: 4379020 (1983-04-01), Glaeser et al.
patent: 4466179 (1984-08-01), Kasten
patent: 4693759 (1987-09-01), Noguchi et al.
patent: 4694143 (1987-09-01), Nishimura et al.
patent: 4727044 (1988-02-01), Yamazaki
patent: 4775641 (1988-10-01), Duffy et al.
patent: 4808546 (1989-02-01), Moniwa et al.
patent: 4885052 (1989-12-01), Fan et al.
patent: 4904611 (1990-02-01), Chiang et al.
patent: 4992846 (1991-02-01), Sakakibara et al.
"Solid Phase Epitaxy of LPCVD Amorphous Silicon Films," M. K. Hatalis et al., Journal of the Electrochemical Society, vol. 134, No. 10, Oct. 1987, pp. 2536-2540.

Affiliated with

Also associated with

Rating

Crystal growth method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Crystal growth method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Crystal growth method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2310103