Crystal growth in glasses and amorphous semiconductors

Details Crystal growth in glasses and amorphous semiconductors Crystal growth in glasses and amorphous semiconductors

1981-11-23

1984-08-07

Albritton, C. L.

Electric heating

Metal heating

By arc

219121LE, 219121LF, B23K 2700

Patent

active

044645570

ABSTRACT:
Crystal growth is effected by laser energy input and direct heating at a glass-crystal interface. The process is based on the use of a laser beam of appropriate wavelength as a means of providing heat to the interface due to transmittance differences between the glass and crystal phases. The process is useful for inducing crystal growth in amorphous semiconductors and oriented crystal growth in ceramic, metallic, and polymeric glasses, and for producing shaped single crystals from preformed glassy shapes. The transmittance differences can be used to provide direct heat and thus drive any two-phase boundary on a microscopic scale.

REFERENCES:
patent: 3756799 (1973-09-01), Neuroth
patent: 4201559 (1980-05-01), Rittler

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