Crystal growth apparatus and method of producing a crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state

Reexamination Certificate

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C117S073000, C117S081000, C117S200000, C117S206000, C117S900000

Reexamination Certificate

active

07462238

ABSTRACT:
A crystal growth apparatus comprises a reaction vessel holding a melt mixture containing an alkali metal and a group III metal in a vessel space thereof, a porous member holding a metal melt by a surface tension thereof in a path through which a vapor of the alkali metal in contact with the metal mixture in the vessel space escapes to an external space, the porous member further supplying a nitrogen source gas fed from outside thereto further to the reaction vessel therethrough and through the metal melt by a pressure difference formed between the vessel space in the reaction vessel and the external space, and a heating apparatus heating the melt mixture to a crystal growth temperature.

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U.S. Appl. No. 11/498,841, Aug. 4, 2006, Sarayama et al.
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U.S. Appl. No. 11/498,841, filed Aug. 4, 2006, Sarayama et al.

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