Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state
Reexamination Certificate
2006-08-04
2008-12-09
Hiteshew, Felisa C (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Havin growth from molten state
C117S073000, C117S081000, C117S200000, C117S206000, C117S900000
Reexamination Certificate
active
07462238
ABSTRACT:
A crystal growth apparatus comprises a reaction vessel holding a melt mixture containing an alkali metal and a group III metal in a vessel space thereof, a porous member holding a metal melt by a surface tension thereof in a path through which a vapor of the alkali metal in contact with the metal mixture in the vessel space escapes to an external space, the porous member further supplying a nitrogen source gas fed from outside thereto further to the reaction vessel therethrough and through the metal melt by a pressure difference formed between the vessel space in the reaction vessel and the external space, and a heating apparatus heating the melt mixture to a crystal growth temperature.
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Ara Kuniaki
Fuse Akihiro
Iwata Hirokazu
Saito Junichi
Sarayama Seiji
Hiteshew Felisa C
Japan Atomic Energy Agency
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Ricoh & Company, Ltd.
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