Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – With means for measuring – testing – or sensing
Reexamination Certificate
2008-05-21
2011-11-22
Kornakov, Michael (Department: 1714)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
With means for measuring, testing, or sensing
C117S200000, C117S201000, C117S204000, C117S206000, C117S223000
Reexamination Certificate
active
08062423
ABSTRACT:
A crystal-growing furnace with a convectional cooling structure includes a furnace body, a heating room, and at least one heater. The heating room is accommodated in the furnace body, and includes an upper partition, a plurality of side partitions, and a lower partition. The upper partition is provided with an upper opening, and the lower partition with a central opening. Further, the heating room is provided with an upper door, a lower door, an upper driver, and a lower driver. When silicon slurry is to be cooled and solidified, cooling gaseous stream flows into a lower portion of the heating room through the central opening. Then the upper opening is opened by the upper door which is driven by the upper driver, so that heated gaseous stream is discharged from the upper opening and flows downward along furnace inside wall, and flows back to the heating room from the central opening. Therefore, an automatic convectional circulating cooling flow field can be formed, such that the silicon slurry can be cooled quickly with time saved and production efficiency improved. Further, in the process of cooling and crystal growing from the silicon slurry, solidification and crystallization start from bottom to upward of the silicon slurry, such that inner stress and corner fracture may not be occurred to the silicon crystal ingots, and that a desirable quality of the silicon crystal ingots can be obtained.
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Bacon & Thomas PLLC
Bratland, Jr. Kenneth A
Green Energy Technology Inc.
Kornakov Michael
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