Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state
Reexamination Certificate
2007-08-28
2007-08-28
Kunemund, Robert (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Havin growth from molten state
C117S082000, C117S083000, C117S223000
Reexamination Certificate
active
10650240
ABSTRACT:
This invention is based on the problem of achieving the most planar possible phase boundary extending in the horizontal direction between the still molten material and the material that has already crystallized out in a vertical Bridgman crystal-growing furnace or vertical gradient freeze crystal-growing furnace for crystallizing out the semiconductor melt and doing so at a low cost. Therefore, jacket heaters are provided coaxially with the furnace core containing the crucible and measurement devices for determining radial temperature differences in the space between the jacket heaters and the crucible, whereby the heat output of the jacket heaters is adjusted so that the measured temperature differences become zero. Thus, at least in the planes in which the measurement devices are located, radial heat transport is prevented and a phase boundary that is not curved is implemented.
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Crystal Growing System GmbH
Kunemund Robert
Needle & Rosenberg P.C.
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