Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Reexamination Certificate
2008-05-28
2011-11-29
Kornakov, Michael (Department: 1714)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
For crystallization from liquid or supercritical state
C117S201000, C117S202000, C422S109000, C422S110000, C422S111000, C422S245100, C373S110000
Reexamination Certificate
active
08066814
ABSTRACT:
A crystal-growing furnace having a slurry drainage duct structure includes a furnace body, a supporting table, a loading frame, a plurality of eaves elements, and a set of eaves gutters. The supporting table includes a table plate and a plurality of supporting posts. The loading frame includes a lower plate and four side plates, where four elongated eaves boards descend from sides of the lower plate. Four eaves gutters, having V-shaped grooves, are connected with one another and disposed beneath the four eaves elements correspondingly. Any high-temperature silicon slurry leaks from a furnace crucible will be guided by the elongated eaves boards into the V-shaped grooves of the eaves gutters to prevent the silicon slurry from flowing along the periphery of the table plate and down to the supporting posts.
REFERENCES:
patent: 2002/0157602 (2002-10-01), Mizuishi et al.
patent: 2010/0051108 (2010-03-01), Cliber et al.
Lew Shiow-Jeng
Lin Hur-Lon
Bacon & Thomas PLLC
Bratland, Jr. Kenneth A
Green Energy Technology Inc.
Kornakov Michael
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