Crystal growing apparatus with melt-doping facility

Details Crystal growing apparatus with melt-doping facility Crystal growing apparatus with melt-doping facility

1998-01-05

2000-02-01

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 30, 117 33, 117214, 117218, 117911, C30B 1504

Patent

active

060198389

ABSTRACT:
A crystal growing apparatus is able to provide dopant to a melt in the apparatus. A hopper is carrying dopant is integrated into a pull shaft of the apparatus so that dopant can be added to the melt without providing additional orifices in the apparatus or by opening the interior of the apparatus to the atmosphere.

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patent: 5840115 (1998-11-01), Taguchi et al.

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