Crystal display processing method and crystal wafer manufacturin

Details Crystal display processing method and crystal wafer manufacturin Crystal display processing method and crystal wafer manufacturin

1998-03-27

2000-05-16

Gulakowski, Randy

Etching a substrate: processes

Nongaseous phase etching of substrate

Etching inorganic substrate

216 99, 134 13, 134902, 438906, B44C 122

Patent

active

060633018

ABSTRACT:
A method of smoothly processing a surface of crystal material, particularly a quartz crystal, to attain a good surface roughness and degree of eveness without substantial hillocks or micro-projections, without performing grinding or polishing processing. After lapping the surface of the crystal material, the lapped surface is etched with hydrofluoric acid. Finish etching is performed on the crystal material by buffer hydrofluoric acid as needed. In the manufacture of a crystal piece used in a crystal device, after the crystal wafer cut out from the rough crystal stone to the specified thickness is lapped, it is roughly etched to the desired thickness by hydrofluoric acid. Then, after ultrasonic washing by pure water, the crystal wafer is processed to the desired high quality of surface roughness, level of smoothness and thickness. The surface processing can be performed more easily, in less time, and with less labor than conventional methods, the cost is decreased, and productivity rises. In the manufacture of crystal resonator pieces, a rise in yield can be achieved.

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patent: 4795582 (1989-01-01), Ohmi et al.
patent: 5071776 (1991-12-01), Matsushita et al.
patent: 5855811 (1999-01-01), Grieger et al.
patent: 5911889 (1999-06-01), Fabry et al.

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