Superconductor technology: apparatus – material – process – High temperature devices – systems – apparatus – com- ponents,... – Semiconductor thin film device or thin film electric...
Patent
1992-09-17
1995-07-04
Saadat, Mahshid D.
Superconductor technology: apparatus, material, process
High temperature devices, systems, apparatus, com- ponents,...
Semiconductor thin film device or thin film electric...
257 15, 257 20, 257 35, 257 39, 505234, 505237, 505238, 505239, 505701, 505779, 427 62, 427 63, H01B 1200, H01L 3922, H01L 29161, B05D 512
Patent
active
054300118
ABSTRACT:
A superconducting thin film formed on a substrate, comprising at least one oxide superconductor layer formed on the principal surface of said substrate and at least one oxide layer formed of an oxide which compensates for crystalline incompleteness at the surface of said oxide superconductor layer, and which is arranged on or under the superconducting layer.
REFERENCES:
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patent: 5087605 (1992-02-01), Hegde et al.
Rogers et al., "Fabrication of Heteroepitaxial YBa.sub.2 Cu.sub.3 O.sub.7-x -PrBa.sub.2 Cu.sub.3 O.sub.7-x YBa.sub.3 O.sub.7-x Josephson Devices Grown by Laser Deposition", Applied Physics Letters, vol. 55, No. 19, pp. 2032-2034 (Nov. 1989).
Triscone et al., "YBa.sub.2 Cu.sub.3 O.sub.7 /PrBa.sub.2 Cu.sub.3 O.sub.7 Superlattices: Properties of Ultrathin Superconducting Layers Separated by Insulating Layers," Physical Review Letters, vol. 64, No. 7, pp. 804-807 (Feb. 1990).
Obara et al., "Preparation of PrBa.sub.2 Cu.sub.3 O.sub.y and PrBa.sub.2 Cu.sub.3 O.sub.y /YBa.sub.2 Cu.sub.3 O.sub.y Epitaxial Films using Molecular Beam Epitaxy," Applied Physics Letters, vol. 58, No. 3, 298-300 (Jan. 1991).
Bando et al., "Rheed Study of Crystal Growth of High Temperature Superconducting Oxides in Reactive Coevaporation," Physica C., vol. 180, pp. 3-10 (1991).
Iiyama Michitomo
Tanaka So
Saadat Mahshid D.
Sumitomi Electric Industries, Ltd.
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