Crystal articles and method for forming the same

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437241, 117 95, 117106, 117913, C30B 2512

Patent

active

053648153

ABSTRACT:
A crystal article comprises;

REFERENCES:
patent: 3421055 (1969-01-01), Bean et al.
patent: 3620833 (1971-11-01), Gleim et al.
patent: 4076573 (1978-02-01), Shaw et al.
patent: 4462847 (1984-07-01), Thompson et al.
patent: 4497683 (1985-02-01), Celler et al.
patent: 4534820 (1985-08-01), Mori et al.
patent: 4637127 (1987-01-01), Kurogi et al.
patent: 4657603 (1987-04-01), Kruehler et al.
patent: 4786615 (1988-11-01), Liaw et al.
Jodus et al, Simultaneous Polycrystalline and Monocrystalline Epitaxial Silicon Growth, IBM Technical Disclosure Bulletin, vol. 14, No. 7, Dec. 1971, p. 2100.
Jastrzebski et al., Growth Process of Silicon Over SiO.sub.2 by CVD: Epitaxial Lateral Overgrowth . . . , Jour. of Electrochem. "Solid State Science and Tech", vol. 13C, No. 7, pp. 1571-1580.
A. G. Abdullayev et al., "The Simultaneous Growth of Monocruystalline and Polycrystalline Silicon Films with Controlled Parameters", May 1984, vol. 115, No. 3, pp. 237-243.
J. M. Hong, et al., "Selective-Area Epitaxy of GaAs Through Silicon Dioxide Windows by Molecular Beam Epitaxy," Jan. 1986, vol. 48 No. 2, pp. 142-144.
D. D. Rathman et al., "Lateral Epitaxial Overgrowth of Silicon on SiO.sub.2," Oct. 1982, vol. 129, No. 10, pp. 2303-2306.
J. D. Filby et al., "Single-Crystal Films of Silicon on Insulators," Oct. 1967, vol. 18, No. 10, pp. 1357-1382.
J. W. Matthews, "Epitaxial Growth," published by Academic Press, 1975, pp. 12, 21, 413 and 428.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Crystal articles and method for forming the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Crystal articles and method for forming the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Crystal articles and method for forming the same will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1097473

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.