Cryogenic semiconductor power devices

Details Cryogenic semiconductor power devices Cryogenic semiconductor power devices

1989-10-31

1992-06-30

Jackson, Jr., Jerome

357 80, H01L 3902

Patent

active

051268302

ABSTRACT:
A cryogenic solid-state semiconductor power device, has the actual device chip mounted on a substrate of a material of very high thermal conductivity, which is positioned in a a bath of cryogenic fluid. The substrate may be formed of beryllia, beryllium, alumina, aluminum nitride, diamond and the like materials.

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patent: 4472727 (1984-09-01), Tewksburg
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patent: 4734820 (1988-03-01), Lauffer et al.
patent: 4965659 (1990-10-01), Sasame et al.
patent: 4980754 (1990-12-01), Kotani et al.
Rideout, "Close-Cycle Liquid Nitrogen Refrigeration System for Low-Temperature Computer Operation," Sep. 1975, IBM Technical Disclosure Bulletin, vol. 18, No. 4, pp. 1226-1229.

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