Cryogenic removal of silicon substrates from metallic heat sinks

Details Cryogenic removal of silicon substrates from metallic heat sinks Cryogenic removal of silicon substrates from metallic heat sinks

1994-06-27

1995-09-12

Arbes, Carl J.

Metal working

Method of mechanical manufacture

Disassembling

294264, 156344, 228264, B23P 1900

Patent

active

054488176

ABSTRACT:
The use of a liquid nitrogen (LN.sub.2) bath to produce thermal stress between an aluminum heat sink and a silicon circuit board by deep cooling, makes it possible to separate each from the other product undamaged. This allows repair or replacement of the silicon substrate in a very short time with very little turn around time.

REFERENCES:
patent: 3834605 (1974-09-01), Coffin
patent: 3837815 (1974-09-01), Bixby
patent: 3969813 (1976-07-01), Minetti et al.
patent: 4274576 (1981-06-01), Shariff
patent: 4603345 (1986-07-01), Lee et al.
patent: 5070603 (1991-12-01), Waldsmith
patent: 5199159 (1993-04-01), Waldsmith
patent: 5263620 (1993-11-01), Hernandez et al.

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