Cryogenic radiation-hard dual-layer field oxide for field-effect

Details Cryogenic radiation-hard dual-layer field oxide for field-effect Cryogenic radiation-hard dual-layer field oxide for field-effect

1992-07-24

1994-04-19

Ngo, Ngan

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

257288, 257639, 257641, 257644, 257649, 257650, H01L 2934, H01L 2702

Patent

active

053048407

ABSTRACT:
A cryogenic radiation-hard dual-layer field oxide of reoxidized nitrided oxide (ONO) which provides radiation hardness for field-effect transistors and other semiconductor devices at cryogenic temperatures. The dual-layer field oxide includes a thin lower dielectric layer of reoxidized nitrided oxide and an upper deposited dielectric layer that remains charge neutral. The upper dielectric layer is preferably silicon nitride or a doped oxide, such as phospho silicate glass or boro phospho silicate glass. The lower dielectric layer can be made very thin since reoxidized nitrided oxide is a much better barrier layer to the diffusion of boron or phosphorous from the upper dielectric layer into the silicon substrate than silicon dioxide. A thin lower dielectric layer allows only a small amount of positive charge buildup, while the upper dielectric layer traps both holes and electrons and remains charge neutral.

REFERENCES:
patent: 3967310 (1976-06-01), Horiuchi et al.
patent: 4051273 (1977-09-01), Abbas et al.
patent: 4356042 (1982-10-01), Gedaly et al.
patent: 4485393 (1984-11-01), Kumamaru et al.
patent: 4543707 (1985-10-01), Ito et al.

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