Crushing of silicon on ultrapure ice

Details Crushing of silicon on ultrapure ice Crushing of silicon on ultrapure ice

1998-03-31

2000-05-16

Niebling, John F.

Semiconductor device manufacturing: process

Gettering of substrate

By vibrating or impacting

438800, H01L 21322, H01L 2100

Patent

active

060636971

ABSTRACT:
A device for protecting semiconductor material includes a support and a surface made of ice formed from ultrapure water. Semiconductor material is situated on this support surface.

REFERENCES:
patent: 4820650 (1989-04-01), Nagae et al.
patent: 4883775 (1989-11-01), Kobayashi
patent: 5013693 (1991-05-01), Guckel et al.
patent: 5348893 (1994-09-01), Yamagishi
patent: 5443863 (1995-08-01), Neely et al.
patent: 5464480 (1995-11-01), Matthews

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